Power MOSFET
Description
l Fully Isolated Package
l Easy to Use and Parallel
l Low On-Resistance
l Dynamic dv/dt Rating
l Fully Avalanche Rated
G
l Simple Drive Requirements
l Low Drain to Case Capacitance
l Low Internal Inductance
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized d...
Similar Datasheet