DatasheetsPDF.com

IRFI5210

Part Number	IRFI5210
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Oct 30, 2020
Detailed Description	PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Cr...
Datasheet	IRFI5210 PDF File

Overview

PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS l Sink to Lead Creepage Dist.
= 4.
8mm l P-Channel l Fully Avalanche Rated G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
...

Similar Datasheet

IRFI520A Advanced Power MOSFET - Fairchild Semiconductor
IRFI520G HEXFET POWER MOSFET - International Rectifier
IRFI520G Power MOSFET - Vishay
IRFI520GPBF HEXFET Power MOSFET - International Rectifier
IRFI520N Power MOSFET - International Rectifier
IRFI5210 Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)