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IRFBE30PBF

INCHANGE
Part Number IRFBE30PBF
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 30, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFBE30PBF ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Fast Switching S...
Datasheet PDF File IRFBE30PBF PDF File

IRFBE30PBF
IRFBE30PBF

Overview
isc N-Channel MOSFET Transistor IRFBE30PBF ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·High-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.
1 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS...


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