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IRFU5305

INCHANGE
Part Number IRFU5305
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Oct 30, 2020
Detailed Description isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A) ·Advan...
Datasheet PDF File IRFU5305 PDF File

IRFU5305
IRFU5305

Overview
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -31 A PD Total Dissipation @TC=25℃ 110 W Tj Max.
Operating Temperature Junction -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal re...


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