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IXFH12N65X2

INCHANGE
Part Number IXFH12N65X2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 2, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :...
Datasheet PDF File IXFH12N65X2 PDF File

IXFH12N65X2
IXFH12N65X2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 310mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pulsed 24 A PD Total Dissipation 180 W Tj Operating Junction Temperature -55~150 ℃ Tstg S...


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