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IXFH24N60X

INCHANGE
Part Number IXFH24N60X
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 2, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 175mΩ@VGS=10V ·Fully characteri...
Datasheet PDF File IXFH24N60X PDF File

IXFH24N60X
IXFH24N60X

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 175mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipation @TC=25℃ 400 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL P...


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