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IXFP8N85X

INCHANGE
Part Number IXFP8N85X
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 2, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥850V ·Static Drain-Source On-Resistance : RDS(...
Datasheet PDF File IXFP8N85X PDF File

IXFP8N85X
IXFP8N85X

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC Converters ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 850 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 16 A PD Total Dissipation @TC=25℃ 200 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·TH...


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