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IXKH47N60C

INCHANGE
Part Number IXKH47N60C
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 2, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 70mΩ@VGS=10V ·Fully characteriz...
Datasheet PDF File IXKH47N60C PDF File

IXKH47N60C
IXKH47N60C

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 70mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 47 A Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.
3 UNIT...


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