N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 480mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Current Regulators ·Solid State Circuit Breakers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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