Power MOSFET
Description
Preliminary Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T
VDSS = ID25 =
RDS(on) ≤
150V 90A 20mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
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