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TK2P90E

Toshiba
Part Number TK2P90E
Manufacturer Toshiba
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK2P90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK2P90E PDF File

TK2P90E
TK2P90E

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK2P90E 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 4.
7 Ω (typ.
) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.
5 to 4.
0 V (VDS = 10 V, ID = 0.
2 mA) 3.
Packaging and Internal Circuit TK2P90E 1: Gate 2: Drain(Heatsink) 3: Source DPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 2 A Drain current (pulsed) (Note 1) IDP 6 Power dissipation (Tc = 25) PD 80 W Single-pulse avalanche energy (Note 2) EAS 157 mJ Avalanche current IAR 2 A Reverse drain current (DC) (Note 1) IDR 2 Reverse drain current (pulsed) (Note 1) IDRP 6 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the applic...


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