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IXTH1N100

INCHANGE
Part Number IXTH1N100
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 11, 2020
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 1.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Sta...
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IXTH1N100
IXTH1N100

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 1.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 1000 V ±20 V 1.
5 A 6 A 60...


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