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IXTH22N50P

INCHANGE
Part Number IXTH22N50P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 11, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100%...
Datasheet PDF File IXTH22N50P PDF File

IXTH22N50P
IXTH22N50P

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 500 UNIT V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation 350 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
35 UNIT ...


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