P-Channel MOSFET
Description
isc P-Channel MOSFET Transistor
IXTP28P065T
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤45mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS...
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