isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-3 ·High DC Current Gain-
: hFE >10@IC= 1.5A ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 180V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector...
