N-Channel MOSFET
Description
Isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 360mΩ(Max) ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
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