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TK10P50W

INCHANGE
Part Number TK10P50W
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω(MAX) ·Easy to control Gate s...
Datasheet PDF File TK10P50W PDF File

TK10P50W
TK10P50W


Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
38Ω(MAX) ·Easy to control Gate switching ·Enhancement mode: VTH = 2.
7 to 3.
7 V (VDS = 10 V, ID=0.
5 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 9.
7 A IDM Drain Current-Single Pulsed 38.
8 A PD Total Dissipation @TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
57 UNIT ℃/W TK10P50W isc website:www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID= 0.
5mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 4.
9A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 500V; VGS= 0V VSDF Diode forward voltage IDR = 9.
7 A, VGS = 0 V TK10P50W MIN TYP MAX UNIT 500 V 2.
7 3.
7 V 380 mΩ ±1 μA 10 μA 1.
7 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
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