DatasheetsPDF.com

IRFPC60LC

Part Number	IRFPC60LC
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 15, 2020
Detailed Description	iscN-Channel MOSFET Transistor IRFPC60LC ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤0.4Ω @VGS=10V ·Enhancemen...
Datasheet	IRFPC60LC PDF File

Overview

iscN-Channel MOSFET Transistor IRFPC60LC ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤0.
4Ω @VGS=10V ·Enhancement mode: Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pulsed 64 A PD Total Dissipation @TC=25℃ 280 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL ...

Similar Datasheet

IRFPC60 Power MOSFET - Vishay
IRFPC60 Power MOSFET - International Rectifier
IRFPC60LC Power MOSFET - Vishay
IRFPC60LC Power MOSFET - International Rectifier
IRFPC60LC N-Channel MOSFET - INCHANGE
IRFPC60LC-P HEXFET Power MOSFET - International Rectifier
IRFPC60PbF Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)