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IRFIB41N15D

International Rectifier
Part Number IRFIB41N15D
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 15, 2020
Detailed Description Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Ch...
Datasheet PDF File IRFIB41N15D PDF File

IRFIB41N15D
IRFIB41N15D

Overview
Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 150V PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D HEXFET® Power MOSFET RDS(on) max ID 0.
045: 41A TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM c Pulsed Drain Current PD @TA = 25°C Power Dissipation, D2Pak PD @TC = 25°C Power Dissipation, TO-220 PD @TC = 25°C Power Dissipation, Fullpak Linear Derating Factor, TO-220 Linear Derating Factor, Fullpak VGS dv/dt TJ TSTG Gate-to-Source Voltage e Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC Junction-to-Case RθJC Junction-to-Case, Fullpak Rθcs h Case-to-Sink, Flat, Greased Surface RθJA h Junction-to-Ambient, TO-220 RθJA i Junction-to-Ambient, D2Pak RθJA Junction-to-Ambient, Fullpak Notes  through ‡ are on page 12 www.
irf.
com Max.
41 29 164 3.
1 200 48 1.
3 0.
32 ± 30 2.
7 -55 to + 175 300 (1.
6mm from case ) 1.
1(10) Typ.
––– ––– 0.
50 ––– ––– ––– Max.
0.
75 3.
14 ––– 62 40 65 Units A W W/°C V V/ns °C N•m (lbf•in) Units °C/W 1 07/16/03 IRFB/IRFIB/IRFS/IRFSL41N15D Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Min.
Drain-to-Source Breakdown Voltage 150 Breakdown Voltage Temp.
Coefficient ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 3.
0 Drain-to-Source Leakage Current ––– ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ.
––– 0.
17 ––– ––– ––– ––– ––– ––– Max.
Units Conditions ...


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