INSULATED GATE BIPOLAR TRANSISTOR
Description
AUTOMOTIVE GRADE
AUIRGS30B60K AUIRGSL30B60K
INSULATED GATE BIPOLAR TRANSISTOR
Features Low VCE (on) Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C Lead-Free, RoHS Compliant Automotive Qualified * *
Benefits Benchmark Efficien...
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