N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
AOW66412
FEATURES ·Drain Current –ID=120A@ TC=25℃ ·Drain Source Voltage-
: VDSS=40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =1.9Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general
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