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TC74ACT08P

Toshiba
Part Number TC74ACT08P
Manufacturer Toshiba
Description Quad 2-Input AND Gate
Published Jan 21, 2021
Detailed Description CMOS Digital Integrated Circuits Silicon Monolithic TC74ACT08P TC74ACT08P 1. Functional Description • Quad 2-Input AND...
Datasheet PDF File TC74ACT08P PDF File

TC74ACT08P
TC74ACT08P


Overview
CMOS Digital Integrated Circuits Silicon Monolithic TC74ACT08P TC74ACT08P 1.
Functional Description • Quad 2-Input AND Gate 2.
General The TC74ACT08P is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate and doublelayer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS.
The inputs are compatible with TTL, NMOS and CMOS output voltage levels.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3.
Features (1) High speed: tpd = 4.
7 ns (typ.
) at VCC = 5.
0 V (2) Low power dissipation: ICC = 4.
0 µA (max) at Ta = 25 � (3) Compatible with TTL inputs: VIL = 0.
8 V (max) : VIH = 2.
0 V (min) (4) Output current: |IOH|/IOL = 24 mA (min) (VCC = 4.
5 V) (5) Balanced propagation delays: tPLH ≈ tPHL (6) Pin and function compatible with 74F08.
4.
Packaging DIP14 ©2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1988-10 2020-12-08 Rev.
1.
0 5.
Pin Assignment 6.
Marking 7.
IEC Logic Symbol TC74ACT08P ©2020 2 Toshiba Electronic Devices & Storage Corporation 2020-12-08 Rev.
1.
0 8.
Truth Table TC74ACT08P A B Y L L L L H L H L L H H H 9.
Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.
5 to 7.
0 V Input voltage VIN -0.
5 to VCC + 0.
5 V Output voltage Input diode current Output diode current Output current VCC/ground current VOUT IIK IOK IOUT ICC -0.
5 to VCC + 0.
5 V ±20 mA ±50 mA ±50 mA ±100 mA Power dissipation Storage temperature PD (Note 1) 500 mW Tstg -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/...



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