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TC74ACT86P

Toshiba
Part Number TC74ACT86P
Manufacturer Toshiba
Description Quad Exclusive OR Gate
Published Jan 22, 2021
Detailed Description TC74ACT86P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT86P, TC74ACT86F Quad Exclusive OR Gate T...
Datasheet PDF File TC74ACT86P PDF File

TC74ACT86P
TC74ACT86P

Overview
TC74ACT86P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT86P, TC74ACT86F Quad Exclusive OR Gate The TC74ACT86 is an advanced high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS.
The inputs are compatible with TTL, NMOS and CMOS output voltage levels.
The internal circuit is includes on output buffer, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 5.
0 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • Compatible with TTL outputs: VIL = 0.
8 V (max) VIH = 2.
0 V (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL • Pin and function compatible with 74F86 Pin Assignment TC74ACT86P TC74ACT86F Weight DIP14-P-300-2.
54 SOP14-P-300-1.
27A : 0.
96 g (typ.
) : 0.
18 g (typ.
) Start of commercial production 1988-10 1 2014-03-01 IEC Logic Symbol TC74ACT86P/F Truth Table A B Y L L L L H H H L H H H L Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range VCC −0.
5 to 7.
0 V DC input voltage VIN −0.
5 to VCC + 0.
5 V DC output voltage Input diode current Output diode current DC output current VOUT IIK IOK IOUT −0.
5 to VCC + 0.
5 V ±20 mA ±50 mA ±50 mA DC VCC/ground current ICC ±100 mA Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW Storage temperature Tstg −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under hea...


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