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TC7SBL384CFU

Toshiba
Part Number TC7SBL384CFU
Manufacturer Toshiba
Description Low Voltage / Low Capacitance Single Bus Switch
Published Feb 14, 2021
Detailed Description TC7SBL66C,384CFU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SBL66CFU, TC7SBL384CFU Low Voltage / Low ...
Datasheet PDF File TC7SBL384CFU PDF File

TC7SBL384CFU
TC7SBL384CFU


Overview
TC7SBL66C,384CFU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SBL66CFU, TC7SBL384CFU Low Voltage / Low Capacitance Single Bus Switch The TC7SBL66C and TC7SBL384C are a Low Voltage / Low Capacitance CMOS single Bus Switch.
The low On-resistance of the switch allows connections to be made with minimal propagation delay time.
The TC7SBL66C requires the output enable (OE) input to be set low to place the output into the high impedance state,whereas the TC7SBL384C requires the output enable ( OE ) input to be set high to place the output into the high impedance.
All inputs are equipped with protection circuits against static discharge.
Features Weight: 0.
006 g (typ.
) • Operating voltage : VCC = 1.
65 to 3.
6 V • On-capacitance : CI/O = 7 pF Switch On (typ.
)@VCC = 3 V • On-resistance : RON = 5.
5 Ω (typ.
) @ VCC = 3 V, VI/O = 0 V • ESD performance : Machine model ≥ ±200 V Human body model ≥ ±2000 V • Power-down protection for inputs (OE and OE , I/O) • Package : USV Pin Assignment (top view) TC7SBL66CFU VCC OE 5 4 TC7SBL384CFU VCC OE 5 4 JV JO 123 A B GND 123 A B GND Start of commercial production 2008-06 1 2014-03-01 Truth Table Inputs (66) OE H L Inputs (384) OE L H Function A port = B port Disconnect System Diagram TC7SBL66CFU TC7SBL66C,384CFU TC7SBL384CFU A B A B OE OE 2 2014-03-01 Absolute Maximum Ratings (Note) TC7SBL66C,384CFU Characteristic Symbol Rating Unit Power supply range VCC −0.
5 to 4.
6 V Control pin input voltage ( OE ,OE) VIN −0.
5 to 4.
6 V VCC = 0 V or Switch = Off VS Switch terminal I/O voltage −0.
5 to 4.
6 V Switch = On VS −0.
5 to VCC+0.
5 Clump diode current IIK −50 mA Switch I/O current IS 50 mA Power dissipation PD 200 mW DC VCC/GND current ICC/IGND ±100 mA Storage temperature Tstg −65 to 150 °C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under heavy lo...



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