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BAT54SW

nexperia
Part Number BAT54SW
Manufacturer nexperia
Description Schottky barrier diode
Published Apr 6, 2021
Detailed Description BAT54SW Schottky barrier diode 1 April 2023 Product data sheet 1. General description Planar Schottky barrier diode wi...
Datasheet PDF File BAT54SW PDF File

BAT54SW
BAT54SW

Overview
BAT54SW Schottky barrier diode 1 April 2023 Product data sheet 1.
General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • Low forward voltage • Low capacitance 3.
Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Per diode VR reverse voltage VF forward voltage IR reverse current Conditions Tj = 25 °C IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.
02; Tamb = 25 °C VR = 25 V; tp ≤ 300 µs; δ ≤ 0.
02; pulsed; Tamb = 25 °C Min Typ Max Unit - - 30 V - - 800 mV - - 2 µA 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 A1 anode (diode 1) 2 K2 cathode (diode 2) 3 K1, A2 cathode (diode 1) and anode (diode 2) Simplified outline 3 1 2 SC-70 (SOT323) Graphic symbol K1; A2 A1 K2 006aaa437 Nexperia BAT54SW Schottky barrier diode 6.
Ordering information Table 3.
Ordering information Type number Package Name BAT54SW SC-70 Description plastic, surface-mounted package; 3 leads; 1.
3 mm pitch; 2 mm x 1.
25 mm x 0.
95 mm body Version SOT323 7.
Marking Table 4.
Marking codes Type number BAT54SW [1] % = placeholder for manufacturing site code Marking code[1] 44% 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Per diode VR reverse voltage Tj = 25 °C IF forward current IFRM repetitive peak forward tp ≤ 1 s; δ ≤ 0.
5 current IFSM non-repetitive peak tp < 10 ms; Tj(init) = 25 °C forward current Per device; one diode loaded Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C Min - [1] - [2] - - -55 -65 [1] Tj = 25 °C before surge.
[2] Device ...


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