GaN HEMT
Description
CGHV96130F
130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Description
Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to ...
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