2SB507
Description
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SB507
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in power amplifier and switching circuits.
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C...
DC COMPONENTS
B507 PDF File
Similar Datasheet