P-Channel MOSFET
Description
isc P-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= -8.6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 25mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpos...
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