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NVD5C648NL
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
NVD5C648NL FEATURES ·Drain Current –ID= 89A@ TC=25℃ ·Drain Source Voltage- VDSS= 60V(Min) ·Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Dr...
INCHANGE
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