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HUF75345S3S

ON Semiconductor
Part Number HUF75345S3S
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Nov 23, 2021
Detailed Description MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel po...
Datasheet PDF File HUF75345S3S PDF File

HUF75345S3S
HUF75345S3S

Overview
MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process.
This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−operated products.
Features • 75 A, 55 V • Simulation Models − Temperature Compensated PSPICEt and SABER® Models − Thermal Impedance SPICE and SABER Models • Peak Current vs Pulse Width Curve • UIS Rating Curve • These Devices are Pb−Free www.
onsemi.
com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S DRAIN (TAB) TO−247−3 CASE 340CK G D S GDS DRAIN (FLANGE) TO−220−3 CASE 340AT DRAIN (FLANGE) G S D2PAK−3 CASE 418AJ MARKING DIAGRAM $Y&Z&3&K 75345X © Semiconductor Components Industries, LLC, 2009 March, 2020 − Rev.
3 $Y &Z &3 &K 75345X = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code X = G/P/S ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: HUF75345S3S/D HUF75345G3, HUF75345P3, HUF75345S3S PACKAGE MARKING AND ORDERING INFORMATION Part Number Package HUF75345G3 TO−247−3 HUF75345P3 TO−220−3 HUF75345S3ST D2PAK−3 Brand 75345G 75345P 75345S MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VDGR VGS ID IDM EAS PD Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20 kW) (Note 1) Gate to Source Voltage Drain Current − Continuous (Figure 2) Drain Current − Pulsed Pulsed Avalanc...


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