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NVBG040N120SC1

Part Number	NVBG040N120SC1
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Published	Dec 4, 2021
Detailed Description	DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V ...
Datasheet	NVBG040N120SC1 PDF File

Overview

DATA SHEET www.
onsemi.
com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60 A Drain (TAB) Features • Typ.
RDS(on) = 40 mW • Ultra Low Gate Charge (Typ.
QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ.
Coss = 139 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Automotive On Board Charger • Automotive DC-DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Ga...

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NVBG040N120SC1 N-Channel MOSFET - ON Semiconductor

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