P-Channel MOSFET
Description
MOSFET – P-Channel, POWERTRENCH
-20 V, -4 A, 100 mW
FDC642P-F085, FDC642P-F085P
Features
Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A Fast Switching Speed Low Gate Charge (6.9 nC Typical) High Performance Trench Technology for Extremely Low RDS(on) SUPERSOTt−6 Package: Small Footprint (72% Sm...
Similar Datasheet
