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NVCW4LS001N08HA

Part Number	NVCW4LS001N08HA
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Published	Jun 28, 2022
Detailed Description	MOSFET – Power, N-Channel 80 V, 1.0 mW NVCW4LS001N08HA Features • Typical RDS(on) = 0.82 mW at VGS = 10 V • Typical Qg(...
Datasheet	NVCW4LS001N08HA PDF File

Overview

MOSFET – Power, N-Channel 80 V, 1.
0 mW NVCW4LS001N08HA Features • Typical RDS(on) = 0.
82 mW at VGS = 10 V • Typical Qg(tot) = 166 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness 6604 x 4445 80 (6362 x 2059) x 2 330 x 600 101.
6 Gate and Source : AlCu Drain : Ti−Ni−Ag (back side of die) Passivation : Polyimide Wafer Diameter : 8 inch Wafer Unsawn on UV Tape Bad dice identified in Inking Gross Die Count : 806 DIE DATA SHEET www.
onsemi.
com ORDERING INFORMATION Device NVCW4LS001N08HA Package Unsawn Wafer on Ring Frame RECOMMENDED STORAGE CONDITIONS Temperature 22 to 28°C RH 40% to 66% ELECT...

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NVCW4LS001N08HA N-Channel MOSFET - ON Semiconductor

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