Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
ISCN372N
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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