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ISCNH375W
N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET
Transistor
ISCNH375W FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max)@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and ...
Inchange Semiconductor
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