N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.06Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low voltage, high speed pow...
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