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IAUC26N10S5L245

Infineon
Part Number IAUC26N10S5L245
Manufacturer Infineon
Description Power Transistor
Published Aug 28, 2022
Detailed Description IAUC26N10S5L245 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - ...
Datasheet PDF File IAUC26N10S5L245 PDF File

IAUC26N10S5L245
IAUC26N10S5L245

Overview
IAUC26N10S5L245 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 24.
5 mW 26 A PG-TDSON-8-33 1 1 Type IAUC26N10S5L245 Package Marking PG-TDSON-8-33 5N10L245 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS V GS=10V, DC current T a=85 °C, V GS=10 V, RthJA on 2s2p 2,3) T C=25 °C I D...


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