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IAUC50N08S5L096

Infineon
Part Number IAUC50N08S5L096
Manufacturer Infineon
Description Power Transistor
Published Aug 28, 2022
Detailed Description OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode ...
Datasheet PDF File IAUC50N08S5L096 PDF File

IAUC50N08S5L096
IAUC50N08S5L096

Overview
OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IAUC50N08S5L096 Product Summary VDS RDS(on),max 80 V 9.
6 mW ID 50 A PG-TDSON-8-33 1 1 Type IAUC50N08S5L096 Package PG-TDSON-8-33 Marking 5N08L096 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS V GS=10V, DC current T a=85 °C, V GS=10 V, RthJA on 2s2p 2,3) T C=25 °C I D=...


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