IGBT
Description
NGTB30N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the de...
Similar Datasheet
- NGTB30N60SWG IGBT - ON Semiconductor
