FGD3N60LSD IGBT
FGD3N60LSD
IGBT
Features
High Current Capability Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A High Input Impedance
Applications
HID Lamp Applications Piezo Fuel Injection Applications
C
Description
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed f...
