IGBT
Description
NGTB15N120IHWG
Product Preview IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
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Similar Datasheet
- NGTB15N120IHLWG IGBT - ON Semiconductor
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- NGTB15N120IHWG IGBT - ON Semiconductor