IGBT
Description
NGTB30N65IHL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the...
Similar Datasheet
- NGTB30N65IHL2WG IGBT - ON Semiconductor
