IGBT
Description
IGBT - Ultra Field Stop
1200 V, 40 A, VCE(Sat) = 1.55V, TO247 4L
FGH4L40T120LQD
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited f...
Similar Datasheet
- FGH4L40T120LQD IGBT - ON Semiconductor
