High Voltage, High Gain BIMOSFETTM
Monolithic Bipolar MOS Transistor
IXBF55N300
VCES = IC110 = VCE(sat)
3000V 34A 3.2V
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings
VCES VCGR
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
3000
V
3000
V
VGES VGEM
Continuous Transient
± 25
V
± 35
V
IC25
TC = 25°C
86
A
IC110
TC =...
