MOSFET, N-Channel, POWERTRENCH)
Q1: 30 V, 66 A, 4 mW Q2: 30 V, 42 A, 5.5 mW
FDMD8900
General Description This devices utilizes two optimized N−ch FETs in a dual 3.3 x 5 mm
thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.
Features
Q1: N−Channel
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