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NVMYS016N06C

ON Semiconductor
Part Number NVMYS016N06C
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 23, 2023
Detailed Description MOSFET - Power, Single N-Channel 60 V, 16 mW, 33 A NVMYS016N06C Features • Small Footprint (5x6 mm) for Compact Design ...
Datasheet PDF File NVMYS016N06C PDF File

NVMYS016N06C
NVMYS016N06C

Overview
MOSFET - Power, Single N-Channel 60 V, 16 mW, 33 A NVMYS016N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 33 A 23.
6 35.
7 W 17.
8 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA...


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