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FQD3P50TM-F085

ON Semiconductor
Part Number FQD3P50TM-F085
Manufacturer ON Semiconductor
Description 500V P-Channel MOSFET
Published Jan 24, 2023
Detailed Description FQD3P50TM-F085 500V P-Channel MOSFET FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancem...
Datasheet PDF File FQD3P50TM-F085 PDF File

FQD3P50TM-F085
FQD3P50TM-F085

Overview
FQD3P50TM-F085 500V P-Channel MOSFET FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Features • -2.
1A, -500V, RDS(on) = 4.
9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.
5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant S D ! GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds G! ● ● ▶▲ ● ! D FQD3P50TM-F085 -500 -2.
1 -1.
33 -8.
4 ± 30 250 -2.
1 5.
0 -4.
5 2.
5 50 0.
4 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ Max Units -- 2.
5 °C/W -- 50 °C/W -- 110 °C/W ©2010 Semiconductor Components Industries, LLC.
September-2017, Rev.
3 Publication Order Number: FQD3P50TM-F085/D FQD3P50TM-F085 500V P-Cha...


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