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BAT854CW

nexperia
Part Number BAT854CW
Manufacturer nexperia
Description 200mA Schottky barrier dual diode
Published Mar 1, 2023
Detailed Description BAT854CW 40 V, 200 mA Schottky barrier dual diode 4 January 2023 Product data sheet 1. General description Planar Scho...
Datasheet PDF File BAT854CW PDF File

BAT854CW
BAT854CW

Overview
BAT854CW 40 V, 200 mA Schottky barrier dual diode 4 January 2023 Product data sheet 1.
General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • Very low forward voltage • Very low reverse current • Guard ring protected • Very small SMD plastic package • AEC-Q101 qualified 3.
Applications • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • Low power consumption applications (e.
g.
hand-held applications) 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Per diode VR reverse voltage IF forward current VF forward voltage IR reverse current Conditions IF = 100 mA; Tamb = 25 °C VR = 25 V; tp ≤ 300 µs; δ ≤ 0.
02; pulsed; Tamb = 25 °C Min Typ Max Unit - - 40 V - - 200 mA - - 550 mV - - 0.
5 µA Nexperia BAT854CW 40 V, 200 mA Schottky barrier dual diode 5.
Pinning information Table 2.
Pinning information Pin Symbol Description Simplified outline 1 A1 anode (diode 1) 3 2 A2 anode (diode 2) 3 K1, K2 common cathode (diode 1 and diode 2) 1 2 SC-70 (SOT323) Graphic symbol K1; K2 A1 A2 006aaa438 6.
Ordering information Table 3.
Ordering information Type number Package Name BAT854CW SC-70 Description plastic, surface-mounted package; 3 leads; 1.
3 mm pitch; 2 mm x 1.
25 mm x 0.
95 mm body Version SOT323 7.
Marking Table 4.
Marking codes Type number BAT854CW [1] % = placeholder for manufacturing site code Marking code[1] 83% 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Per diode VR reverse voltage IF forward current IFRM repetitive peak forward tp ≤ 1 s; δ ≤ 0.
5 current IFSM Tj Tamb Tstg non-repetitive peak forward current junction temperature ambient temperature storage temperature tp = 8.
3...


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