Automotive-grade silicon carbide Power MOSFET
Description
SCT018H65G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Features
Order code SCT018H65G3AG
VDS 650 V
RDS(on) typ. 20 mΩ
ID 55 A
AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrin...
Similar Datasheet
