Automotive-grade silicon carbide Power MOSFET
Description
SCT020H120G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Features
Order code SCT020H120G3AG
VDS 1200 V
RDS(on) typ. 18.5 mΩ
AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrin...
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